unisonic technologies co., ltd 9N80 preliminary power mosfet www.unisonic.com.tw 1 of 5 copyright ? 2011 unisonic technologies co., ltd qw-r502-493.b 9 amps, 800 volts n-channel power mosfet ? description the utc 9N80 is an n-channel mode power fet using utc?s advanced technology to provide costumers with planar stripe and dmos technology. this technology is specialized in allowing a minimum on-state resistance and supe rior switching performance. it also can withstand high energy pulse in the avalanche and commutation mode. the utc 9N80 is universally applied in high efficiency switch mode power supply. ? features * improved gate charge * lower input capacitance * lower leakage current: 25 a (max.) @ v ds = 800v * halogen free ? symbol ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing 9N80l-tf1-t 9N80g-tf1-t to-220f1 g d s tube note: pin assignment: g: gate d: drain s: source
9N80 preliminary power mosfet unisonic technologies co., ltd 2 of 5 www.unisonic.com.tw qw-r502-493.b ? absolute maximum ratings (t c = 25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 800 v gate-source voltage v gss 30 v avalanche current (note 1) i ar 9 a continuous i d 9 a drain current (continuous) pulsed (note 1) i dm 36 a single pulsed (note 2) e as 900 mj avalanche energy repetitive (note 1) e ar 24 mj peak diode recovery dv/dt (note 3) dv/dt 2.0 v/ns power dissipation p d 49 w junction temperature t j +150 c storage temperature t stg -55~+150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? thermal characteristics parameter symbol ratings unit junction to ambient ja 62.5 c/w junction to case jc 2.55 c/w
9N80 preliminary power mosfet unisonic technologies co., ltd 3 of 5 www.unisonic.com.tw qw-r502-493.b ? electrical characteristics (t c =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =250a, v gs =0v 800 v breakdown voltage temperature coefficient bv dss /t j i d =250a, 0.96 v/c drain-source leakage current i dss v ds =800v 25 a forward v gs =+30v +100 na gate- source leakage current reverse i gss v gs =-30v -100 na on characteristics gate threshold voltage v gs(th) v ds =5v, i d =250a 2.0 3.5 v static drain-source on-state resistance r ds(on) v gs =10v, i d =4.5a (note 4) 1.3 ? forward transconductance g fs v ds =50v, i d =4.5a (note 4) 5.54 s dynamic parameters input capacitance c iss 2020 2600 pf output capacitance c oss 195 230 pf reverse transfer capacitance c rss v gs =0v, v ds =25v, f=1.0mhz, 82 95 pf switching parameters total gate charge q g 93 120 nc gate to source charge q gs 14.3 nc gate to drain charge q gd v gs =10v, v ds =640v, i d =9a, (note 4, 5) 42.1 nc turn-on delay time t d(on) 25 60 ns rise time t r 37 85 ns turn-off delay time t d(off) 113 235 ns fall-time t f v dd =400v, i d =9 a, r g =16 ? , (note 4. 5) 42 95 ns source- drain diode ratings and characteristics maximum body-diode continuous current i s 9 a maximum pulsed drain-source diode forward current (note 1) i sm integral reverse pn-diode in the mosfet 36 a drain-source diode forward voltage (note 4) v sd i s =9a, v gs =0v, t j =25c 1.4 v reverse recovery time t rr 560 ns reverse recovery charge q rr t j =25c, i f =9a, di f /dt=100a/s, (note 4) 8.4 c note: 1. repetitive rating: pulse width limited by maximum junction temperature 2. l = 21mh, i as = 9a, v dd = 50v, r g = 27 ? , starting t j = 25c 3. i sd 9a, di/dt 180a/s, v dd bv dss , starting t j = 25c 4. pulse test: pulse width 250s, duty cycle 2% 5. essentially independent of operating temperature
9N80 preliminary power mosfet unisonic technologies co., ltd 4 of 5 www.unisonic.com.tw qw-r502-493.b ? test circuits and waveforms v ds + - dut r g dv/dt controlled by r g i sd controlled by pulse period v dd peak diode recovery dv/d t test circuit & waveforms same type as dut i sd v gs l v gs (driver ) i sd (dut) v ds (dut) d= gate pulse width gate pulse period 10v di/dt body diode reverse current i rm body diode recovery dv/dt v dd v f body diode forward voltage drop i fm , body diode forward current driver
9N80 preliminary power mosfet unisonic technologies co., ltd 5 of 5 www.unisonic.com.tw qw-r502-493.b utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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